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1310nm,1550nm FP Laser Diode Module

 

Application

  • Data communication
  • Telecom speed applications
  • Ethernet

 

Specification

  • Adopt InGaAsP/InP material, MQW-FP quantum well structure
  • Low threshold current, high temperature resistance, built-in monitor
  • Laser welding fixing
  • High reliability, long life
  • Different adapter type: FC, SC, LC etc
  • Japanese core tube

Limit Ratings (Tc=25°C)

Parameters

min

max

Working temperature range -40°C +85°C
Storage temperature range -40°C +100°C
Welding temperature (T-max<10s) 240°C
LD reverse voltage 2V
PD reverse voltage 20V
PD forward current 2mA

Photoelectric Characteristics (Tc=25°C)

Thephotoelectricity parameter

min

Typical values

max

Test conditions

1310nm

1510nm

1310nm

1550nm

1310nm

1550nm

Output optical power 0.2mW 0.5mW IF=IOP,CW
0.6mW 0.8mW 1.1mW
1.2mW 2.0mW
3.0mW 4.0mW
Threshold current 10mA 15mA
Working current 30mA 40mA
Positive Voltage 1.1v 1.5v IF=IOP,CW
Center wavelength 1290nm 1530nm 1310nm 1550nm 1330nm 1570nm IF=IOP,CW
Spectrum width 2.0nm 3.0nm 7.0nm
Rise and fail of time 0.3ns 0.7ns If=lth, lth +20mA, 10-90%
Monitor current 0.1mA 0.5mA CW, lth +20mA, Vrd=1V